Title :
Base current transient behavior in polyimide-passivated InP/InGaAs heterojunction bipolar transistors
Author :
Wang, Hong ; Ng, Geok Ing ; McAlister, Sean P.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Inst., Singapore
Abstract :
We have investigated a transient effect in the base current in polyimide passivated InP/InGaAs heterojunction bipolar transistors (HBTs) and its influence on the device characteristics. The trapping and detrapping of static charge in the polyimide at the polyimide/semiconductor interface is found to be the root cause of the base current transient. We have also found that the transient effect can be suppressed by post-process high-dose UV exposure
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; passivation; polymer films; ultraviolet lithography; InP-InGaAs; base current transient behavior; detrapping; device characteristics; polyimide; polyimide-passivated InP/InGaAs heterojunction bipolar transistors; post-process high-dose UV exposure; static charge; transient effect; trapping; Current measurement; Electrodes; Electrons; Etching; Fabrication; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Passivation; Polyimides;
Conference_Titel :
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location :
Williamsburg, VA
Print_ISBN :
0-7803-6320-5
DOI :
10.1109/ICIPRM.2000.850265
