• DocumentCode
    2123572
  • Title

    Direct extraction method of small-signal equivalent circuit model of a GaInP/GaAs Heterojunction Bipolar Transistor

  • Author

    Ouslimani, A. ; Birafane, A. ; Pasquet, D. ; Pouvil, P. ; Leier, H.

  • Author_Institution
    Ecole Nationale Supérieure de l´´Electronique et de ses Applications, les Chênes Pourpres 95014 Cergy Pontoise
  • Volume
    2
  • fYear
    1994
  • fDate
    5-9 Sept. 1994
  • Firstpage
    1593
  • Lastpage
    1597
  • Abstract
    A new method for determining the complete equivalent circuit parameters of the GaInP/GaAs HBT including parasitic base contact is presented. It employs an analytically derived expressions and it is based on an analysis of the measured Z-parameters over an adequate frequency range. No use of optimization or test patterns is required in the procedure. All the elements are directly calculated. Good agreement is obtained between measured and simulated S-parameters in the frequency range of 0.3 to 40 GHz.
  • Keywords
    Circuit simulation; Circuit testing; Data mining; Equivalent circuits; Frequency measurement; Gallium arsenide; Heterojunction bipolar transistors; Microwave devices; Parameter extraction; Scattering parameters;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1994. 24th European
  • Conference_Location
    Cannes, France
  • Type

    conf

  • DOI
    10.1109/EUMA.1994.337445
  • Filename
    4138491
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2123572