Title :
Direct extraction method of small-signal equivalent circuit model of a GaInP/GaAs Heterojunction Bipolar Transistor
Author :
Ouslimani, A. ; Birafane, A. ; Pasquet, D. ; Pouvil, P. ; Leier, H.
Author_Institution :
Ecole Nationale Supérieure de l´´Electronique et de ses Applications, les Chênes Pourpres 95014 Cergy Pontoise
Abstract :
A new method for determining the complete equivalent circuit parameters of the GaInP/GaAs HBT including parasitic base contact is presented. It employs an analytically derived expressions and it is based on an analysis of the measured Z-parameters over an adequate frequency range. No use of optimization or test patterns is required in the procedure. All the elements are directly calculated. Good agreement is obtained between measured and simulated S-parameters in the frequency range of 0.3 to 40 GHz.
Keywords :
Circuit simulation; Circuit testing; Data mining; Equivalent circuits; Frequency measurement; Gallium arsenide; Heterojunction bipolar transistors; Microwave devices; Parameter extraction; Scattering parameters;
Conference_Titel :
Microwave Conference, 1994. 24th European
Conference_Location :
Cannes, France
DOI :
10.1109/EUMA.1994.337445
