Title :
Dynamic scaling of plasma etched InP surface
Author :
Silova, M. ; Bruls, D.M. ; Silov, A.Yu. ; Roy, B. H v ; Smalbrugge, E. ; Karouta, F. ; Koenraad, P.M. ; Wolter, J.H.
Author_Institution :
Res. Inst. on Commun. Technol., Eindhoven Univ. of Technol., Netherlands
Abstract :
Dynamical microroughening of the etch front of InP(100) due to Electron Cyclotron Resonance plasma etching was investigated. A quantitative study of the etch front morphology shows that the scaling law holds and the observed structure is self-affine. The low value of the growth exponent (β=0.37) indicates that neither plasma reemission nor geometrical shadowing controls the Electron Cyclotron Resonance etching of InP
Keywords :
III-V semiconductors; indium compounds; sputter etching; surface topography; Electron Cyclotron Resonance plasma etching; InP; dynamic scaling; dynamical microroughening; etch front; etch front morphology; plasma etched InP surface; scaling law; self-affine; Atomic force microscopy; Cyclotrons; Dry etching; Electrons; Indium phosphide; Plasma applications; Plasma devices; Rough surfaces; Surface morphology; Surface roughness;
Conference_Titel :
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location :
Williamsburg, VA
Print_ISBN :
0-7803-6320-5
DOI :
10.1109/ICIPRM.2000.850267
