DocumentCode
2123607
Title
Dynamic scaling of plasma etched InP surface
Author
Silova, M. ; Bruls, D.M. ; Silov, A.Yu. ; Roy, B. H v ; Smalbrugge, E. ; Karouta, F. ; Koenraad, P.M. ; Wolter, J.H.
Author_Institution
Res. Inst. on Commun. Technol., Eindhoven Univ. of Technol., Netherlands
fYear
2000
fDate
2000
Firstpage
201
Lastpage
204
Abstract
Dynamical microroughening of the etch front of InP(100) due to Electron Cyclotron Resonance plasma etching was investigated. A quantitative study of the etch front morphology shows that the scaling law holds and the observed structure is self-affine. The low value of the growth exponent (β=0.37) indicates that neither plasma reemission nor geometrical shadowing controls the Electron Cyclotron Resonance etching of InP
Keywords
III-V semiconductors; indium compounds; sputter etching; surface topography; Electron Cyclotron Resonance plasma etching; InP; dynamic scaling; dynamical microroughening; etch front; etch front morphology; plasma etched InP surface; scaling law; self-affine; Atomic force microscopy; Cyclotrons; Dry etching; Electrons; Indium phosphide; Plasma applications; Plasma devices; Rough surfaces; Surface morphology; Surface roughness;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location
Williamsburg, VA
ISSN
1092-8669
Print_ISBN
0-7803-6320-5
Type
conf
DOI
10.1109/ICIPRM.2000.850267
Filename
850267
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