DocumentCode
2123649
Title
Nonlinear RF Characterization and Modeling of Heterojunction Bipolar Transistors Under Pulsed Conditions
Author
Viaud, J.P. ; Sommet, R. ; Teyssier, J.P. ; Floriot, D. ; Quèré, R. é
Author_Institution
IRCOM CNRS URA n°356 Université de Limoges(FRANCE), IUT 7 rue Jules Vallés 19100 BRIVE
Volume
2
fYear
1994
fDate
5-9 Sept. 1994
Firstpage
1610
Lastpage
1615
Abstract
I(V) and S-parameters pulsed measurments have been performed on a heterojunction bipolar transistor for currents up to 105 Amps/cm2. S-parameters data have been acquired in the whole device output domain. So, a nonlinear DC to RF consistent model has been obtained with I(V) and RF pulsed measurements on a GaInP/GaAs HBT transistor, processed by the central research laboratory of Thomson CSF.
Keywords
Breakdown voltage; Current measurement; Gain measurement; Gallium arsenide; Heterojunction bipolar transistors; Microwave devices; Performance evaluation; Pulse measurements; Radio frequency; Scattering parameters;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1994. 24th European
Conference_Location
Cannes, France
Type
conf
DOI
10.1109/EUMA.1994.337448
Filename
4138494
Link To Document