DocumentCode :
2123869
Title :
High Integrated MMIC Multifunctions for X Band Sensor Applications
Author :
Camiade, M. ; Serru, V.
Author_Institution :
THOMSON-CSF SEMICONDUCTEURS SPECIFIQUES, RD 128 - BP 46 - 91401 ORSAY CEDEX - (FRANCE)
Volume :
2
fYear :
1994
fDate :
5-9 Sept. 1994
Firstpage :
1655
Lastpage :
1660
Abstract :
A set of single chip multifunctions has been developed at X band for sensor applications. This kind of circuits gathers all the necessary basic functions such as oscillators, buffer amplifiers, power dividers, modulators and mixers. The chosen technology is TCS standard process LN05 based on 0.5¿m implanted MESFET, via holes, air bridges and electron beam lithography. All of these circuits are working around 10GHz with more than 20% bandwidth. The transmitted output power is greater than lOdBm and the noise figure is better than 7.5dB SSB for an IF of 10MHz. The IF output can also be used at very low frequencies (from DC) and exhibits low noise with a typical value of ¿140dBm/Hz at IkHz.
Keywords :
Bandwidth; Bridge circuits; Electron beams; Integrated circuit technology; Lithography; MESFETs; MMICs; Oscillators; Power amplifiers; Power dividers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 1994. 24th European
Conference_Location :
Cannes, France
Type :
conf
DOI :
10.1109/EUMA.1994.337456
Filename :
4138502
Link To Document :
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