• DocumentCode
    2123873
  • Title

    Proper determination of tunnel model parameters for indirect band-to-band tunneling in compressively strained Si1−xGex TFETs

  • Author

    Nguyen Dang Chien ; Luu The Vinh ; Nguyen Van Kien ; Jui-Kai Hsia ; Ting-Shiuan Kang ; Chun-Hsing Shih

  • Author_Institution
    Dept. of Electr. Eng., Nat. Chi Nan Univ., Nantou, Taiwan
  • fYear
    2013
  • fDate
    25-26 Feb. 2013
  • Firstpage
    67
  • Lastpage
    70
  • Abstract
    Tunnel field-effect transistor (TFET) has served as one of the most attractive candidates for use in future low-power integrated circuits. To explore the current-voltage characteristics of TFET devices, the Kane´s tunnel model has been widely used in numerical simulations and physical models to predict the tunneling current produced in the TFETs. This study examines the proper calculations of Kane´s model parameters appropriate for the indirect band-to-band tunneling generated in compressively strained Si1-xGex channel on Si-substrate. The calculated parameters were verified with the measured results from experimental TFETs. Good agreements are confirmed between the numerical and measured data without any fitting factors.
  • Keywords
    field effect transistors; low-power electronics; tunnel transistors; Kane tunnel model; Si1-xGex; compressively strained TFET; current-voltage characteristics; indirect band-to-band tunneling; low-power integrated circuits; tunnel field-effect transistor; tunnel model parameters; Integrated circuit modeling; Logic gates; Numerical models; Photonic band gap; Silicon; Transistors; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Next-Generation Electronics (ISNE), 2013 IEEE International Symposium on
  • Conference_Location
    Kaohsiung
  • Print_ISBN
    978-1-4673-3036-7
  • Type

    conf

  • DOI
    10.1109/ISNE.2013.6512282
  • Filename
    6512282
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2123873