Development of the amorphous, high resistivity Ge:(O,N) films for radiation-hardened MIS device applications

Author

Jishiashvili, D. ; Shiolashvili, Z. ; Janelidze, R. ; Gobronidze, V. ; Kutelia, E. ; Mosidze, L. ; Nakhutsrishvili, I. ; Katsiashvili, M.

Author_Institution

Inst. of Cybern., Acad. of Sci., Tbilisi, Georgia

Volume

2

fYear

1996

fDate

9-12 Oct 1996

Firstpage

451

Abstract

Application of amorphous, high resistivity O- and N-doped Ge films is proposed to solve some radiation hardness problems. The new type of insulating a-Ge:(O,N) films makes it possible to increase the radiation hardness of metal-insulator-semiconductor (MIS) transistors at least by 4 orders of magnitude. Fabrication of MIS integrated circuits on the basis of a-Ge:(O,N) films can enlarge the utilization of these advantageous devices in radioactive environment (space, nuclear power-plants etc.)

Keywords

MIS devices; MISFET; amorphous state; field effect integrated circuits; germanium; insulating thin films; nitrogen; oxygen; radiation hardening (electronics); Ge:O,N; MIS integrated circuits; MIS transistors; amorphous high resistivity films; insulating films; metal-insulator-semiconductor devices; radiation-hardened MIS device applications; radioactive environment; Amorphous semiconductors; Capacitance; Conductivity; Insulation; MIS devices; Radiation hardening; Sputtering;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1996., International

Conference_Location

Sinaia

Print_ISBN

0-7803-3223-7

Type

conf

DOI

10.1109/SMICND.1996.557417

Filename

557417