Title :
Development of the amorphous, high resistivity Ge:(O,N) films for radiation-hardened MIS device applications
Author :
Jishiashvili, D. ; Shiolashvili, Z. ; Janelidze, R. ; Gobronidze, V. ; Kutelia, E. ; Mosidze, L. ; Nakhutsrishvili, I. ; Katsiashvili, M.
Author_Institution :
Inst. of Cybern., Acad. of Sci., Tbilisi, Georgia
Abstract :
Application of amorphous, high resistivity O- and N-doped Ge films is proposed to solve some radiation hardness problems. The new type of insulating a-Ge:(O,N) films makes it possible to increase the radiation hardness of metal-insulator-semiconductor (MIS) transistors at least by 4 orders of magnitude. Fabrication of MIS integrated circuits on the basis of a-Ge:(O,N) films can enlarge the utilization of these advantageous devices in radioactive environment (space, nuclear power-plants etc.)
Keywords :
MIS devices; MISFET; amorphous state; field effect integrated circuits; germanium; insulating thin films; nitrogen; oxygen; radiation hardening (electronics); Ge:O,N; MIS integrated circuits; MIS transistors; amorphous high resistivity films; insulating films; metal-insulator-semiconductor devices; radiation-hardened MIS device applications; radioactive environment; Amorphous semiconductors; Capacitance; Conductivity; Insulation; MIS devices; Radiation hardening; Sputtering;
Conference_Titel :
Semiconductor Conference, 1996., International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3223-7
DOI :
10.1109/SMICND.1996.557417
