Title :
Accurate equivalent circuit model of deep trench capacitors by numerical simulation and analytical calculation
Author :
Fathnan, A.A. ; Kumar, Vipin ; Yang, Songping ; Sheu, G.
Author_Institution :
Dept. of Comput. Sci. & Inf. Eng., Asia Univ., Taichung, Taiwan
Abstract :
This paper presents an analytical model of y-parameters for trench capacitors devices. 2-d poisson´s solution is used, which gives the closed form solutions of the potential and electrical field distributions as a function of the structure parameters and top electrode bias. Dependence of substrate equivalent series resistance on current path length of top electrode to ground is also simulated. Optimum high-capacitance and low series resistance devices is proposed. Analytical results are in a good agreement with simulation results obtained by sentaurus and previous experimental data.
Keywords :
capacitors; equivalent circuits; numerical analysis; analytical calculation; closed form solutions; current path length; deep trench capacitors; electrical field distributions; electrode bias; equivalent circuit model; low series resistance devices; numerical simulation; optimum high-capacitance; potential field distributions; structure parameters; substrate equivalent series resistance; top electrode; y-parameter analytical model; Capacitance; Capacitors; Electrodes; Equivalent circuits; Integrated circuit modeling; Mathematical model; Resistance;
Conference_Titel :
Next-Generation Electronics (ISNE), 2013 IEEE International Symposium on
Conference_Location :
Kaohsiung
Print_ISBN :
978-1-4673-3036-7
DOI :
10.1109/ISNE.2013.6512291
