Title :
“On-wafer” surface implanted high power, picosecond pulse InGaAs/InP (λ-1.53-1.55 μm) laser diodes
Author :
Paraskevopoulos, A. ; Hensel, H.J. ; Schelhase, S. ; Frahm, J. ; Kübler, J. ; Denker, A. ; Gubenko, A. ; Portnoi, E.L.
Author_Institution :
Heinrich-Hertz-Inst. fur Nachrichtentech. Berlin GmbH, Germany
Abstract :
A cost-effective, on-wafer surface implantation technique was applied for the fabrication of short pulse InGaAsP/InP laser diodes. Based on thick electroplated Au masks, local ion implantation could be performed, allowing a versatile design of the absorber region. Picosecond pulses with typical FWHM of 20 ps and optical power exceeding 1.8 W were obtained. The measured emission spectrum in the pulsed regime demonstrates the potential of such devices to pump commercially available EDFA´s
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; ion implantation; laser beams; optical fabrication; optical pulse generation; semiconductor lasers; 1.53 to 1.55 mum; 18 W; 20 ps; Er-doped fibre amplifier; FWHM; InGaAsP-InP; InGaAsP/InP laser diodes; absorber region; commercially available Er-doped fibre amplifier; cost-effective on-wafer surface implantation technique; emission spectrum; fabrication; local ion implantation; on-wafer surface implanted high power picosecond pulse laser diodes; optical power; picosecond pulses; pulsed regime; thick electroplated Au masks; versatile design; Diode lasers; Gold; Indium phosphide; Ion implantation; Optical device fabrication; Optical pulses; Particle beam optics; Pulse measurements; Stimulated emission; Surface emitting lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location :
Williamsburg, VA
Print_ISBN :
0-7803-6320-5
DOI :
10.1109/ICIPRM.2000.850286
