DocumentCode
2124140
Title
The nature of M-InP contacts aging
Author
Korotchenkov, G.S. ; Michailov, V.A. ; Blaje, V.A.
Author_Institution
Lab. of Microelectron., Tech. Univ. of Moldova, Chisinau, Moldova
Volume
2
fYear
1996
fDate
9-12 Oct 1996
Firstpage
459
Abstract
In this report the causes of low temperature aging of M-InP contacts (Au, Ag, Cu, Al, Ni) were examined. On the basis of analysis of M-InP contacts´ Auger-profiles, a conclusion on dominant processes, taking place at the M-InP interface was drawn. We had found that M-InP Schottky barrier aging was defined by proceeding of diffusion processes at the interface. The main one of these diffusion processes is indium diffusion from InP into the metal and intermediate layer
Keywords
Auger effect; III-V semiconductors; Schottky barriers; ageing; aluminium; chemical interdiffusion; copper; gold; indium compounds; nickel; semiconductor-metal boundaries; silver; Ag-InP; Al-InP; Au-InP; Auger-profiles; Cu-InP; In diffusion; M-InP contacts aging; Ni-InP; Schottky barriers aging; diffusion processes; low temperature aging; Acceleration; Aging; Artificial intelligence; Atomic layer deposition; Electric variables; Gold; Laboratories; Schottky barriers; Schottky diodes; Stability;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 1996., International
Conference_Location
Sinaia
Print_ISBN
0-7803-3223-7
Type
conf
DOI
10.1109/SMICND.1996.557419
Filename
557419
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