Title :
The nature of M-InP contacts aging
Author :
Korotchenkov, G.S. ; Michailov, V.A. ; Blaje, V.A.
Author_Institution :
Lab. of Microelectron., Tech. Univ. of Moldova, Chisinau, Moldova
Abstract :
In this report the causes of low temperature aging of M-InP contacts (Au, Ag, Cu, Al, Ni) were examined. On the basis of analysis of M-InP contacts´ Auger-profiles, a conclusion on dominant processes, taking place at the M-InP interface was drawn. We had found that M-InP Schottky barrier aging was defined by proceeding of diffusion processes at the interface. The main one of these diffusion processes is indium diffusion from InP into the metal and intermediate layer
Keywords :
Auger effect; III-V semiconductors; Schottky barriers; ageing; aluminium; chemical interdiffusion; copper; gold; indium compounds; nickel; semiconductor-metal boundaries; silver; Ag-InP; Al-InP; Au-InP; Auger-profiles; Cu-InP; In diffusion; M-InP contacts aging; Ni-InP; Schottky barriers aging; diffusion processes; low temperature aging; Acceleration; Aging; Artificial intelligence; Atomic layer deposition; Electric variables; Gold; Laboratories; Schottky barriers; Schottky diodes; Stability;
Conference_Titel :
Semiconductor Conference, 1996., International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3223-7
DOI :
10.1109/SMICND.1996.557419
