Title :
Transient photocapacitance spectroscopy of Al-As2Se3 junction
Author :
Shutov, S.D. ; Vasiliev, I.A.
Author_Institution :
Inst. of Appl. Phys., Chisinau, Moldova
Abstract :
From long-term (20 to 1000 s) photocapacitance relaxation measurements on an Al-As2Se3 junction the spectral dependence of density and photoionization cross section of the gap states was derived in the range from 1.35 to 1.92 eV. Two photoionization thresholds at 1.35 and 1.53 eV have been found and ascribed to the gap states of charged defects
Keywords :
aluminium; arsenic compounds; chalcogenide glasses; deep level transient spectroscopy; defect states; photocapacitance; semiconductor-metal boundaries; 1.35 to 1.92 eV; 20 to 1000 s; Al-As2Se3; Al-As2Se3 junction; charged defects; gap states; glassy As2Se3; long-term photocapacitance relaxation measurements; photoionization cross section; photoionization thresholds; spectral dependence; transient photocapacitance spectroscopy; Aluminum; Capacitance; Light emitting diodes; Lighting; Monitoring; Optical pulses; Spectroscopy; Temperature; Thickness measurement; Voltage;
Conference_Titel :
Semiconductor Conference, 1996., International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3223-7
DOI :
10.1109/SMICND.1996.557420
