• DocumentCode
    2124151
  • Title

    Transient photocapacitance spectroscopy of Al-As2Se3 junction

  • Author

    Shutov, S.D. ; Vasiliev, I.A.

  • Author_Institution
    Inst. of Appl. Phys., Chisinau, Moldova
  • Volume
    2
  • fYear
    1996
  • fDate
    9-12 Oct 1996
  • Firstpage
    463
  • Abstract
    From long-term (20 to 1000 s) photocapacitance relaxation measurements on an Al-As2Se3 junction the spectral dependence of density and photoionization cross section of the gap states was derived in the range from 1.35 to 1.92 eV. Two photoionization thresholds at 1.35 and 1.53 eV have been found and ascribed to the gap states of charged defects
  • Keywords
    aluminium; arsenic compounds; chalcogenide glasses; deep level transient spectroscopy; defect states; photocapacitance; semiconductor-metal boundaries; 1.35 to 1.92 eV; 20 to 1000 s; Al-As2Se3; Al-As2Se3 junction; charged defects; gap states; glassy As2Se3; long-term photocapacitance relaxation measurements; photoionization cross section; photoionization thresholds; spectral dependence; transient photocapacitance spectroscopy; Aluminum; Capacitance; Light emitting diodes; Lighting; Monitoring; Optical pulses; Spectroscopy; Temperature; Thickness measurement; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1996., International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-3223-7
  • Type

    conf

  • DOI
    10.1109/SMICND.1996.557420
  • Filename
    557420
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2124151