Title :
Fabrication of InP-based HBT integrated circuits
Author :
Thomas, S., III ; Fields, C.H. ; Sokolich, M. ; Kiziloglu, K. ; Chow, D.
Author_Institution :
HRL Labs., Malibu, CA, USA
Abstract :
HRL Laboratories supports three versions of InP-based HBT IC technologies. The first technology, based on 2.0 μm minimum feature size, began development in the late ´80s and has been pursued extensively in the ´90s. This technology provides transistors with 75 GHz Ft and 150 GHz Fmax. The second technology, based on more aggressive 1.0 μm minimum feature size, provides transistors with 160 GHz Ft and 180 GHz Fmax. The third technology integrates resonant tunneling diodes (RTDs) with the 2.0 μm minimum feature size HBT process
Keywords :
Bipolar integrated circuits; Heterojunction bipolar transistors; III-V semiconductors; Indium compounds; Integrated circuit technology; InP; InP HBT integrated circuit; fabrication technology; heterojunction bipolar transistor; resonant tunneling diode; Fabrication; Gallium arsenide; HEMTs; Heterojunction bipolar transistors; Indium gallium arsenide; Integrated circuit technology; Integrated circuit yield; Isolation technology; Laboratories; MODFETs;
Conference_Titel :
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location :
Williamsburg, VA
Print_ISBN :
0-7803-6320-5
DOI :
10.1109/ICIPRM.2000.850288
