Title :
Metamorphic HEMT 0.5 μm low cost high performance process on 4" GaAs substrates
Author :
Benkhelifa, F. ; Chertouk, M. ; Walther, M. ; Lösch, R. ; Weimann, G.
Author_Institution :
Fraunhofer Inst. for Appl. Solid State Phys., Freiburg, Germany
Abstract :
Fabrication, performance and uniformity of 0.5 μm gate length, passivated InAlAs/InGaAs metamorphic HEMTs (MHEMT) on 4 inch GaAs substrates are reported. Excellent uniformity of DC and HF characteristics across 4" wafers was achieved. An fT of 53 GHz and an fmax of 200 GHz was obtained for 0.5 μm gate length devices. The standard deviation of the threshold voltage is 23 to 35 mV from wafer to wafer. These results demonstrate the potential of a low cost technology to fabricate MHEMTs on 4" GaAs substrates using i-line steppers to manufacture in production volumes
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; 0.5 micron; 4 inch; DC characteristics; GaAs; GaAs substrate; HF characteristics; InAlAs-InGaAs; InAlAs/InGaAs metamorphic HEMT; fabrication technology; i-line stepper; passivation; threshold voltage; volume production; Costs; Fabrication; Gallium arsenide; Hafnium; Indium compounds; Indium gallium arsenide; Manufacturing; Production; Threshold voltage; mHEMTs;
Conference_Titel :
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location :
Williamsburg, VA
Print_ISBN :
0-7803-6320-5
DOI :
10.1109/ICIPRM.2000.850289
