DocumentCode :
2124223
Title :
Factors influencing the electric conductance of SnO2 gas sensors
Author :
Ionescu, R. ; Vancu, Ana
Author_Institution :
Inst. of Phys. & Technol. of Mater., Bucharest, Romania
Volume :
2
fYear :
1996
fDate :
9-12 Oct 1996
Firstpage :
489
Abstract :
The ever increasing concern about air pollution, the need to monitor potentially hazardous gases and to improve the efficiency of combustion processes has stimulated during the past three decades an extensive research and development of gas sensors. Among various types of gas sensing devices, most popular became the chemoresistive sensors based on the surface characteristics of semiconducting oxides, most commonly termed semiconductor gas sensors SGS. They offer the advantages of small size, simple operation, high sensitivity and simple associated electronics. They detect small concentrations (up to a few ppm) of reducing gases (H2, CO, NOx, hydrocarbons, alcohol vapours) in oxygen containing atmospheres (usually air) by variations in their electrical conductance. Besides the atmospheric composition, however, and depending on the conditions of preparation of the semiconducting oxide (heat treatment, doping), other important factors which produce conductance variations are the temperature of operation and the electrical phenomena at the electrodes. In our laboratory we concentrated on the study of sintered SnO2 thick-film samples, by means of electrical conductance measurements. In the following we shall try to point out some ways of exploiting such measurements for the explanation of some peculiarities observed in the operation of SnO2 SGS
Keywords :
electrical conductivity; gas sensors; semiconductor materials; tin compounds; SnO2; SnO2 gas sensor; chemoresistive sensor; electric conductance; semiconducting oxide; sintered thick film; surface characteristics; Air pollution; Atmospheric measurements; Combustion; Gas detectors; Gases; Monitoring; Pollution measurement; Research and development; Semiconductivity; Sensor phenomena and characterization;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 1996., International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3223-7
Type :
conf
DOI :
10.1109/SMICND.1996.557424
Filename :
557424
Link To Document :
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