Title :
Application of cathodoluminescence microscopy to the study of native acceptors in gallium antimonide
Author :
Piqueras, J. ; Mendez, B. ; Panin, G.N. ; Dutta, P.S. ; Dieguez, E.
Author_Institution :
Dept. de Fisica de Mater., Univ. Complutense de Madrid, Spain
Abstract :
Cathodoluminescence in the scanning electron microscope is used to investigate growth and process induced defects in GaSb crystals. In particular, luminescence emission has been used to study the nature of acceptor defects present after different annealing and irradiation treatments
Keywords :
III-V semiconductors; annealing; cathodoluminescence; crystal defects; gallium compounds; ion beam effects; scanning electron microscopy; GaSb; annealing; cathodoluminescence microscopy; defects; gallium antimonide crystal; growth; irradiation; native acceptors; scanning electron microscopy; Annealing; Atmosphere; Doping; Electron beams; Gallium compounds; Human computer interaction; Microscopy; Milling; Substrates; Temperature;
Conference_Titel :
Semiconductor Conference, 1996., International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3223-7
DOI :
10.1109/SMICND.1996.557426
