Title :
A microcontroller embedded with 4 Kbit ferroelectric non-volatile memory
Author :
Fukushima, T. ; Kawahara, A. ; Nanba, T. ; Matsumoto, M. ; Nishimoto, T. ; Ikeda, N. ; Judai, Y. ; Sumi, T. ; Arita, Kazuki ; Otsuki, T.
Author_Institution :
LSI Dev. Center, Matsushita Electron. Corp., Kyoto, Japan
Abstract :
We have developed for the first time a 4-bit microcontroller (MCU) embedded with 4 Kbit ferroelectric non-volatile memory (FeRAM). The MCU integrating FeRAM demonstrates innovative characteristics such as high data storage speed. Low dissipation power and high endurance more than 10/sup 12/ cycles, neither of which has been realized with EEPROM and Flash EEPROM technology. The performances prove that the MCUs embedded with FeRAM will be one of "key" processors for multimedia devices such as PDA and cellular phone.
Keywords :
ferroelectric storage; integrated circuit measurement; integrated circuit reliability; microcontrollers; random-access storage; 4 Kbit; 4 bit; MCU integrating FeRAM; data storage speed; dissipation power; endurance; ferroelectric nonvolatile memory; microcontroller; multimedia devices; Cellular phones; EPROM; Ferroelectric films; Ferroelectric materials; Microcontrollers; Nonvolatile memory; Random access memory;
Conference_Titel :
VLSI Circuits, 1996. Digest of Technical Papers., 1996 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-3339-X
DOI :
10.1109/VLSIC.1996.507710
