Title :
The trench inversion layer emitter thyristor (ILET)
Author :
Udrea, Florin ; Amaratunga, Gehan A J
Author_Institution :
Dept. of Eng., Cambridge Univ., UK
Abstract :
The Trench Inversion Layer Emitter Thyristor (ILET) is a novel power device structure based on an entirely new physical concept that expresses the transition of an inversion layer from a majority carrier channel into a minority carrier injector. Numerical simulations of the ILET and the experimental evidence of the minority inversion layer injection mechanism are presented. It is found that the ILET has potential for achieving an optimum trade-off between the on-state resistance, off-state blocking voltage, turn-off time and safe operating control
Keywords :
inversion layers; minority carriers; thyristors; ILET; majority carrier channel; minority carrier injector; numerical simulation; power device; trench inversion layer emitter thyristor; Anodes; CMOS technology; Cathodes; Diodes; Electrons; Insulated gate bipolar transistors; Substrates; Threshold voltage; Thyristors; Voltage control;
Conference_Titel :
Semiconductor Conference, 1996., International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3223-7
DOI :
10.1109/SMICND.1996.557431
