DocumentCode
2124382
Title
The trench inversion layer emitter thyristor (ILET)
Author
Udrea, Florin ; Amaratunga, Gehan A J
Author_Institution
Dept. of Eng., Cambridge Univ., UK
Volume
2
fYear
1996
fDate
9-12 Oct 1996
Firstpage
523
Abstract
The Trench Inversion Layer Emitter Thyristor (ILET) is a novel power device structure based on an entirely new physical concept that expresses the transition of an inversion layer from a majority carrier channel into a minority carrier injector. Numerical simulations of the ILET and the experimental evidence of the minority inversion layer injection mechanism are presented. It is found that the ILET has potential for achieving an optimum trade-off between the on-state resistance, off-state blocking voltage, turn-off time and safe operating control
Keywords
inversion layers; minority carriers; thyristors; ILET; majority carrier channel; minority carrier injector; numerical simulation; power device; trench inversion layer emitter thyristor; Anodes; CMOS technology; Cathodes; Diodes; Electrons; Insulated gate bipolar transistors; Substrates; Threshold voltage; Thyristors; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 1996., International
Conference_Location
Sinaia
Print_ISBN
0-7803-3223-7
Type
conf
DOI
10.1109/SMICND.1996.557431
Filename
557431
Link To Document