Title :
High speed InP/InGaAs uni-traveling-carrier photodiodes
Author :
Shimizu, Naofumi ; Muramoto, Yoshifumi ; Miyamoto, Yutaka ; Ishibashi, Tadao
Author_Institution :
NTT Network Innovation Labs., Kanagawa, Japan
Abstract :
High-speed and high-saturation output InP-based uni-traveling-carrier photodiodes (UTC-PDs) have been developed. The structural feature of the devices is that the diode is configured with a p-type photo-absorption layer and a wide-gap electron collector layer. Fabricated UTC-PDs yielded a 3-dB bandwidth of over 100 GHz with operating current density of 200 kV/cm2 or over. This paper examines the bandwidth and RF saturation characteristics of UTC-PDs. We also present an optical receiver utilizing a UTC-PD for high-speed fiber-optic communication systems
Keywords :
III-V semiconductors; gallium arsenide; high-speed optical techniques; indium compounds; optical receivers; photodiodes; 100 GHz; InP-InGaAs; InP/InGaAs uni-traveling-carrier photodiode; RF saturation; bandwidth; current density; high-speed fiber optic communication system; optical receiver; Bandwidth; Current density; Diodes; Electrons; Indium gallium arsenide; Indium phosphide; Optical fiber communication; Optical receivers; Photodiodes; Radio frequency;
Conference_Titel :
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location :
Williamsburg, VA
Print_ISBN :
0-7803-6320-5
DOI :
10.1109/ICIPRM.2000.850295
