Title :
Stress induced charge effects in AlGaAs/GaAs heterojunction bipolar transistors
Author :
Bajdechi, Ovidiu ; McNally, Patrick J.
Author_Institution :
Fac. of Electron., Polytehnica Univ. of Bucharest, Romania
Abstract :
A simulation of stress-induced charge effects in AlGaAs/GaAs heterojunction bipolar transistors has been performed. The results prove that this charge does not modify the transistor´s behaviour even at high emitter stress. The charge was computed using an analytical model and the simulations have been done using a MEDICI 2-D device simulator, including the heterojunction advanced module
Keywords :
III-V semiconductors; aluminium compounds; electric charge; gallium arsenide; heterojunction bipolar transistors; piezoelectricity; semiconductor device models; AlGaAs-GaAs; MEDICI 2D device simulator; analytical model; heterojunction advanced module; heterojunction bipolar transistors; high emitter stress; stress induced charge effects; stress-induced piezoelectric charge; Analytical models; Carbon dioxide; Current density; Gallium arsenide; Geometry; Heterojunction bipolar transistors; Shape; Solid modeling; Stress; Voltage;
Conference_Titel :
Semiconductor Conference, 1996., International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3223-7
DOI :
10.1109/SMICND.1996.557432
