DocumentCode
2124405
Title
Stress induced charge effects in AlGaAs/GaAs heterojunction bipolar transistors
Author
Bajdechi, Ovidiu ; McNally, Patrick J.
Author_Institution
Fac. of Electron., Polytehnica Univ. of Bucharest, Romania
Volume
2
fYear
1996
fDate
9-12 Oct 1996
Firstpage
527
Abstract
A simulation of stress-induced charge effects in AlGaAs/GaAs heterojunction bipolar transistors has been performed. The results prove that this charge does not modify the transistor´s behaviour even at high emitter stress. The charge was computed using an analytical model and the simulations have been done using a MEDICI 2-D device simulator, including the heterojunction advanced module
Keywords
III-V semiconductors; aluminium compounds; electric charge; gallium arsenide; heterojunction bipolar transistors; piezoelectricity; semiconductor device models; AlGaAs-GaAs; MEDICI 2D device simulator; analytical model; heterojunction advanced module; heterojunction bipolar transistors; high emitter stress; stress induced charge effects; stress-induced piezoelectric charge; Analytical models; Carbon dioxide; Current density; Gallium arsenide; Geometry; Heterojunction bipolar transistors; Shape; Solid modeling; Stress; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 1996., International
Conference_Location
Sinaia
Print_ISBN
0-7803-3223-7
Type
conf
DOI
10.1109/SMICND.1996.557432
Filename
557432
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