A 53 GHz monolithically integrated InP/InGaAs PIN/HBT receiver OEIC with an electrical bandwidth of 63 GHz

Author

Huber, D. ; Bitter, M. ; Dülk, M. ; Fischer, S. ; Gini, E. ; Neiger, A. ; Schreieck, R. ; Bergamaschi, C. ; Jäckel, H.

Author_Institution

Electron. Lab., Swiss Federal Inst. of Technol., Zurich, Switzerland

fYear

2000

fDate

2000

Firstpage

325

Lastpage

328

Abstract

We report on the characterization of a monolithically integrated InP/InGaAs PIN/HBT-Photoreceiver for a wavelength of λ=1.55 μm. The preamplifier achieves a transimpedance gain of 44.3 dBΩ (164 Ω) and a bandwidth of 63 GHz, whereas the optical/electrical -3 dB-bandwidth of the entire receiver is 53 GHz. A pulse width of 10.5 ps was measured for the system consisting of receiver, on-wafer probe, bias-tee and sampling-scope. Finally we present eye pattern measurements at 40 Gb/s with a RZ coded optical input signal

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; optical receivers; p-i-n photodiodes; 1.55 micron; 10.5 ps; 40 Gbit/s; 53 GHz; 63 GHz; InP-InGaAs; InP/InGaAs PIN/HBT photoreceiver OEIC; RZ coded optical signal; electrical bandwidth; eye pattern; monolithic integration; optical bandwidth; preamplifier; pulse width; transimpedance gain; Bandwidth; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Optical pulses; Optical receivers; Optoelectronic devices; Preamplifiers; Pulse measurements; Space vector pulse width modulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on

Conference_Location

Williamsburg, VA

ISSN

1092-8669

Print_ISBN

0-7803-6320-5

Type

conf

DOI

10.1109/ICIPRM.2000.850298

Filename

850298