Title :
A 53 GHz monolithically integrated InP/InGaAs PIN/HBT receiver OEIC with an electrical bandwidth of 63 GHz
Author :
Huber, D. ; Bitter, M. ; Dülk, M. ; Fischer, S. ; Gini, E. ; Neiger, A. ; Schreieck, R. ; Bergamaschi, C. ; Jäckel, H.
Author_Institution :
Electron. Lab., Swiss Federal Inst. of Technol., Zurich, Switzerland
Abstract :
We report on the characterization of a monolithically integrated InP/InGaAs PIN/HBT-Photoreceiver for a wavelength of λ=1.55 μm. The preamplifier achieves a transimpedance gain of 44.3 dBΩ (164 Ω) and a bandwidth of 63 GHz, whereas the optical/electrical -3 dB-bandwidth of the entire receiver is 53 GHz. A pulse width of 10.5 ps was measured for the system consisting of receiver, on-wafer probe, bias-tee and sampling-scope. Finally we present eye pattern measurements at 40 Gb/s with a RZ coded optical input signal
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; optical receivers; p-i-n photodiodes; 1.55 micron; 10.5 ps; 40 Gbit/s; 53 GHz; 63 GHz; InP-InGaAs; InP/InGaAs PIN/HBT photoreceiver OEIC; RZ coded optical signal; electrical bandwidth; eye pattern; monolithic integration; optical bandwidth; preamplifier; pulse width; transimpedance gain; Bandwidth; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Optical pulses; Optical receivers; Optoelectronic devices; Preamplifiers; Pulse measurements; Space vector pulse width modulation;
Conference_Titel :
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location :
Williamsburg, VA
Print_ISBN :
0-7803-6320-5
DOI :
10.1109/ICIPRM.2000.850298
