Title :
A critical review of series resistances extraction methods in advanced bipolar transistors
Author :
Popescu, A.E. ; Ionescu, A.M. ; Rusu, A. ; Chovet, A. ; Steriu, D. ; Tudor, B.
Author_Institution :
Lab. de Phys. des Composants a Semicond., ENSERG, Grenoble, France
Abstract :
This paper gives a critical review of some of the most widely used series resistance extraction methods based essentially on static curves revealed by state-of-the-art bipolar transistors: polysilicon-emitter bipolar junction transistors (BJTs) with “normal” (Al) and TiSi2 contacts. An unusual current-dependence of series resistances in polysilicon emitter transistors is also reported
Keywords :
bipolar transistors; electric resistance measurement; elemental semiconductors; impact ionisation; silicon; Al contacts; Al-Si; TiSi2 contacts; TiSi2-Si; advanced bipolar transistors; bipolar junction transistors; current-dependence; impact ionisation method; polysilicon-emitter BJT; series resistances extraction methods; static curves; Bipolar transistors; Contact resistance; Current measurement; Electrical resistance measurement; Impact ionization; Insulation; Microelectronics; Q measurement; System testing; Voltage;
Conference_Titel :
Semiconductor Conference, 1996., International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3223-7
DOI :
10.1109/SMICND.1996.557435
