Title :
Monolithic integration technology using InP-based HEMTs and a uni-traveling-carrier-photodiode for over 40 Gbit/s digital OEIC
Author :
Kitabayashi, Hiroto ; Umeda, Yohtaro ; Furuta, Tomofhi ; Watanabe, Noriyuki ; Akeyoshi, Tomoyuki ; Yamane, Yasuro ; Murata, Koichi ; Shimizu, Naofumi ; Ishii, Yasunobu
Author_Institution :
NTT Photonics Lab., Kanagawa, Japan
Abstract :
A uni-traveling-carrier photodiode (UTC-PD), featuring high-output power and a fast response, was monolithically integrated into a 0.1-μm-gate InP-based HEMT digital IC that can operate at over 40 Gbit/s. In the digital OEIC fabrication using our integration technology, the demultiplexing function of an optical-input D-type flip-flop (D-FF) circuit using 40-Gbit/s return-to-zero (RZ) optical signal and 20-GHz electrical clock signal was confirmed. This integration technology enables the development of a simplified receiver unit with high performance for use in 40-Gbit/s and over TDM systems
Keywords :
HEMT integrated circuits; III-V semiconductors; demultiplexing; flip-flops; indium compounds; integrated optoelectronics; optical receivers; photodiodes; 0.1 micron; 20 GHz; 40 Gbit/s; D-type flip-flop circuit; InP; InP HEMT digital IC; RZ optical signal; TDM system; demultiplexing function; digital OEIC; electrical clock signal; monolithic integration; optical receiver; uni-traveling-carrier photodiode; Digital integrated circuits; HEMTs; Integrated circuit technology; Integrated optics; MODFETs; Monolithic integrated circuits; Optical device fabrication; Optical receivers; Optoelectronic devices; Photodiodes;
Conference_Titel :
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location :
Williamsburg, VA
Print_ISBN :
0-7803-6320-5
DOI :
10.1109/ICIPRM.2000.850299
