Title :
Experimental investigation of noise sources in silicon carbide Schottky barriers
Author :
Anghel, L. ; Ouisse, T. ; Billon, T. ; Lassagne, F. ; Jaussaud, C.
Author_Institution :
Lab. de Phys. des Composants a Semicond., CNRS, Grenoble, France
Abstract :
The excess low frequency noise of silicon carbide Schottky diodes has been systematically measured on n-type silicon carbide devices with Ti gate. The noise results have been related to general properties of these devices such as barrier height and doping level, extracted from varying temperature measurements. The 1/f low frequency noise closely follows a model proposed by Kleinpenning (1979) and is thus most probably due to mobility fluctuations in the depletion region of the Schottky barrier
Keywords :
1/f noise; Schottky barriers; Schottky diodes; carrier mobility; fluctuations; power semiconductor diodes; semiconductor device models; semiconductor device noise; silicon compounds; wide band gap semiconductors; 1/f LF noise; Schottky barriers; Schottky diodes; Ti gate; Ti-SiC; barrier height; depletion region; doping level; excess LF noise; low frequency noise; mobility fluctuations; model; n-type SiC devices; noise sources; Acoustical engineering; Doping; Frequency measurement; Low-frequency noise; Noise level; Noise measurement; Schottky diodes; Semiconductor process modeling; Silicon carbide; Temperature measurement;
Conference_Titel :
Semiconductor Conference, 1996., International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3223-7
DOI :
10.1109/SMICND.1996.557436
