Title :
GaAs metamorphic HEMT (MHEMT): an attractive alternative to InP HEMTs for high performance low noise and power applications
Author :
Whelan, C.S. ; Marsh, P.F. ; Hoke, W.E. ; McTaggart, R.A. ; McCarroll, C.P. ; Kazior, T.E.
Author_Institution :
Raytheon RF Components, Andover, MA, USA
Abstract :
Metamorphic HEMTs (MHEMTs) are becoming the device of choice for low cost millimeter-wave applications, where a high indium content channel is necessary for high performance. This paper will review the material properties, the processing, end the device and amplifier performance of metamorphic HEMTs with 30% to 60% indium channel content, with a focus on work done at Raytheon RF Components
Keywords :
III-V semiconductors; gallium arsenide; millimeter wave field effect transistors; power HEMT; semiconductor device noise; GaAs; GaAs metamorphic HEMT; low noise device; millimeter-wave transistor; power device; Buffer layers; Capacitive sensors; Costs; Gallium arsenide; HEMTs; Indium phosphide; Lattices; MODFETs; Millimeter wave technology; mHEMTs;
Conference_Titel :
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location :
Williamsburg, VA
Print_ISBN :
0-7803-6320-5
DOI :
10.1109/ICIPRM.2000.850301
