DocumentCode
2124540
Title
GaAs metamorphic HEMT (MHEMT): an attractive alternative to InP HEMTs for high performance low noise and power applications
Author
Whelan, C.S. ; Marsh, P.F. ; Hoke, W.E. ; McTaggart, R.A. ; McCarroll, C.P. ; Kazior, T.E.
Author_Institution
Raytheon RF Components, Andover, MA, USA
fYear
2000
fDate
2000
Firstpage
337
Lastpage
340
Abstract
Metamorphic HEMTs (MHEMTs) are becoming the device of choice for low cost millimeter-wave applications, where a high indium content channel is necessary for high performance. This paper will review the material properties, the processing, end the device and amplifier performance of metamorphic HEMTs with 30% to 60% indium channel content, with a focus on work done at Raytheon RF Components
Keywords
III-V semiconductors; gallium arsenide; millimeter wave field effect transistors; power HEMT; semiconductor device noise; GaAs; GaAs metamorphic HEMT; low noise device; millimeter-wave transistor; power device; Buffer layers; Capacitive sensors; Costs; Gallium arsenide; HEMTs; Indium phosphide; Lattices; MODFETs; Millimeter wave technology; mHEMTs;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location
Williamsburg, VA
ISSN
1092-8669
Print_ISBN
0-7803-6320-5
Type
conf
DOI
10.1109/ICIPRM.2000.850301
Filename
850301
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