(AlxGa1-x)0.5In0.5P barrier layer grown by gas source molecular beam epitaxy for V-band (Al xGa1-x)0.5In0.5P/In0.2 Ga0.8As/GaAs power pseudomorph

In this paper, we report the design, fabrication and for the first time power characterization in V-band of (Al,Ga)InP/InGaAs/GaAs power Pseudomorphic High Electron Mobility Transistors grown by Gas Source Molecular Beam Epitaxy. The GaInP/InGaAs/GaAs, AlGaInP/InGaAs/GaAs, AlInP/InGaAs/GaAs Pseudomorphic HEMT structures have been studied from the point of view of the growth as well as the technological process. For the three barrier materials, 0.1×100-μm² T-gate devices were characterized in small signal and large signal conditions at 60 GHz. The best of them, the single side doped GaInP/InGaAs/GaAs structure exhibit an impressive current density of 780 mA/mm, a transconductance of 700 mS/mm and a cut-off frequency of 120 GHz. Power characterizations have been performed at 60 GHz. The Ga_0.5In _0.5P/In_0.2Ga_0.8As/GaAs device has demonstrated a maximum output power density of 560 mW/mm