Title :
Identification and removal of deep levels in InGaP/GaAs heterostructures grown by TBP-based GSMBE
Author :
Fujikura, Hajime ; Hirama, Atsushi ; Ishikawa, Fumitaro ; Sai, Hironobu ; Hasegawa, Hideki
Author_Institution :
Res. Center for Interface Quantum Electron., Hokkaido Univ., Sapporo, Japan
Abstract :
From PL, CL and DLTS measurements, several bulk and interface deep levels were detected in the InGaP epitaxial layers and the InGaP/GaAs quantum wells (QWs) grown by TBP-based GSMBE. These bulk deep levels were almost completely removed by the growth under large TBP flow rate. These bulk deep levels seem to be related to phosphorous vacancy (Vp) or Vp-related complex. On the other hand, InGaP-on-GaAs hetero-interface formed with finite growth interruption exhibited anomalous PL emission at around 1.7 eV. A defect due to strained InGaAsP interlayer at the InGaP-on-GaAs interface produced by the growth interruption is likely to be responsible for the anomalous emission. Anomalous emission was suppressed drastically by the growth without interruption. Intense and narrow PL emissions due to the QWs themselves were observed for the QWs grown without growth interruption
Keywords :
III-V semiconductors; cathodoluminescence; chemical beam epitaxial growth; deep level transient spectroscopy; deep levels; gallium arsenide; gallium compounds; indium compounds; interface states; photoluminescence; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wells; 1.7 eV; DLTS; InGaP-GaAs; InGaP/GaAs heterostructures; TBP-based GSMBE; cathodoluminescence; deep levels; epitaxial layers; photoluminescence; quantum wells; Electrodes; Epitaxial growth; Epitaxial layers; Gallium arsenide; HEMTs; Optical buffering; Substrates; Surface reconstruction; Temperature; Transient analysis;
Conference_Titel :
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location :
Williamsburg, VA
Print_ISBN :
0-7803-6320-5
DOI :
10.1109/ICIPRM.2000.850310
