Title :
N-type doping induced losses in 1.3/1.55 μm distributed Bragg reflectors
Author :
Mogg, S. ; Salomonsson, F. ; Asplund, C. ; Plaine, G. ; Chitica, N. ; Hammar, M.
Author_Institution :
Lab. of Semicond. Mater., R. Inst. of Technol., Kista, Sweden
Abstract :
The effect of n-type doping on the peak reflectivity of InGaAsP/InP as well as GaAs/AlAs distributed Bragg reflectors for long-wavelength vertical-cavity lasers has been investigated. A variety of mirrors with different doping levels were grown in both material systems using metal organic vapour phase epitaxy. The reflectance of the structures was measured with high accuracy employing two independent measurement techniques. While nominally undoped DBRs exhibit an expected reflectivity in excess of 99.9%, doping is found to induce significant losses resulting in up to 0.6% reduced reflectance
Keywords :
III-V semiconductors; MOCVD; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; gallium compounds; indium compounds; laser mirrors; optical losses; reflectivity; semiconductor doping; semiconductor growth; surface emitting lasers; vapour phase epitaxial growth; 1.3 mum; 1.55 mum; DBR; GaAs-AlAs; GaAs/AlAs; InGaAsP-InP; InGaAsP/InP; distributed Bragg reflectors; long-wavelength vertical-cavity lasers; metal organic vapour phase epitaxy; mirrors; n-type doping; n-type doping induced losses; peak reflectivity; reflectance; reflectivity; Distributed Bragg reflectors; Doping; Gallium arsenide; Indium phosphide; Inorganic materials; Mirrors; Optical materials; Organic materials; Reflectivity; Vertical cavity surface emitting lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location :
Williamsburg, VA
Print_ISBN :
0-7803-6320-5
DOI :
10.1109/ICIPRM.2000.850314
