Experimental study of power module with SiC devices

Author

Dong Jiang ; Fan Xu ; Fei Wang ; Tolbert, Leon M. ; Han, T.J. ; Sung Joon Kim

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Univ. of Tennessee, Knoxville, TN, USA

fYear

2011

fDate

17-22 Sept. 2011

Firstpage

3894

Lastpage

3899

Abstract

This paper studies the performance of a newly designed 1200V/60A three-phase SiC power module based on parallel SiC JFETs and diodes. The conduction and the switching performance are tested from room temperature to 150°C. The switching speed of the module increases when temperature rises. In the switching performance test, the gate driver speed could bring false peak in turn-off waveform. The experimental results show that the false peak is cause by Differential-mode (DM) noises but not Common-mode (CM) noises. Finally the losses and efficiency of this power module are evaluated.

Keywords

driver circuits; junction gate field effect transistors; power semiconductor diodes; semiconductor device testing; SiC; SiC device; common mode noise; current 60 A; differential mode noise; false peak; gate driver speed; parallel SiC JFET; parallel SiC diode; switching performance test; switching speed; temperature 150 degC; temperature 293 K to 298 K; three phase SiC power module; turn-off waveform; voltage 1200 V; JFETs; Logic gates; Multichip modules; Resistance; Silicon carbide; Switches; Switching loss;

fLanguage

English

Publisher

ieee

Conference_Titel

Energy Conversion Congress and Exposition (ECCE), 2011 IEEE

Conference_Location

Phoenix, AZ

Print_ISBN

978-1-4577-0542-7

Type

conf

DOI

10.1109/ECCE.2011.6064298

Filename

6064298