Title :
Strain-compensated InGaAs/InAlAs/InP pre-biased quantum well for polarization-insensitive and negative-chirp electro-absorption optical modulators
Author :
Kato, Masaki ; Nakano, Yoshiaki
Author_Institution :
Dept. of Electron. Eng., Tokyo Univ., Japan
Abstract :
We have theoretically demonstrated that a strain-compensated InGaAs/InAlAs/InP pre-biased quantum well brings about both polarization-insensitive and negative-chirp operations simultaneously without additional insertion loss penalty in electro-absorption modulators. This is because the shallower conduction- and valence-band wells due to the strain-compensated structure enhances the spatial separation of electron and hole wavefunctions under relatively small electric field in the pre-biased quantum well
Keywords :
III-V semiconductors; aluminium compounds; chirp modulation; conduction bands; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; light polarisation; quantum well devices; valence bands; wave functions; InGaAs-InAlAs-InP; insertion loss; negative-chirp electro-absorption optical modulators; polarization-insensitive electro-absorption optical modulators; shallow conduction-band wells; shallow valence-band wells; spatial separation; strain-compensated InGaAs/InAlAs/InP pre-biased quantum well; strain-compensated structure; wave functions; Absorption; Charge carrier processes; Chirp; Indium compounds; Indium gallium arsenide; Indium phosphide; Insertion loss; Optical modulation; Optical polarization; Tellurium;
Conference_Titel :
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location :
Williamsburg, VA
Print_ISBN :
0-7803-6320-5
DOI :
10.1109/ICIPRM.2000.850318
