Fabrication of monolithically integrated Mach-Zehnder asymmetric interferometer switch

Author

Liu, X.F. ; Ke, M.L. ; Qiu, B.C. ; Bryce, A.C. ; Marsh, J.H.

Author_Institution

Dept. of Electron. & Electr. Eng., Glasgow Univ., UK

fYear

2000

fDate

2000

Firstpage

412

Lastpage

414

Abstract

We report a novel method of fabricating a compact, monolithically integrated AlInGaAs Mach-Zehnder asymmetric interferometer for use as a 40 Gbit/s demultiplexer. Instead of regrowth, the plasma process damage induced quantum well intermixing was used to modify the bandgap of passive waveguides

Keywords

III-V semiconductors; Mach-Zehnder interferometers; aluminium compounds; demultiplexing equipment; gallium arsenide; indium compounds; integrated optics; optical fabrication; optical switches; plasma materials processing; quantum well devices; semiconductor quantum wells; 40 Gbit/s; AlInGaAs; bandgap; compact monolithically integrated AlInGaAs Mach-Zehnder asymmetric interferometer; demultiplexer; fabrication; monolithically integrated Mach-Zehnder asymmetric interferometer switch; passive waveguides; plasma process damage; quantum well intermixing; Fabrication; Nonlinear optics; Optical interferometry; Optical solitons; Optical waveguides; Photonic band gap; Pulse amplifiers; Semiconductor optical amplifiers; Switches; Ultrafast optics;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on

Conference_Location

Williamsburg, VA

ISSN

1092-8669

Print_ISBN

0-7803-6320-5

Type

conf

DOI

10.1109/ICIPRM.2000.850320

Filename

850320