Title :
Optimization of N-type InSb photoconductive detectors
Author :
Grigorescu, C.E.A. ; Manea, S.A. ; Lazarescu, M.F. ; Logofatu, C. ; Necsoiu, T. ; Botila, T. ; Munteanu, I.
Author_Institution :
Inst. of Optoelectron., Bucharest, Romania
Abstract :
The aim of this paper is to study the influence of power dissipation on the performance of n-type InSb photoconductive detectors for 3-5 μm atmospheric window. By providing mainly a convective heat transfer among the elements of the device the power dissipation has been increased to 10 W/cm2. An improvement in the spectral detectivity is observed. No enhancement in the total noise is remarked
Keywords :
III-V semiconductors; convection; indium compounds; infrared detectors; photoconducting devices; semiconductor device noise; 3 to 5 micrometre; IR detectors; InSb; atmospheric window; convective heat transfer; photoconductive detectors; power dissipation; spectral detectivity; total noise; Charge carrier processes; Crystals; Delay; Detectors; Electrons; Heat transfer; Nitrogen; Photoconductivity; Power dissipation; Temperature;
Conference_Titel :
Semiconductor Conference, 1996., International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3223-7
DOI :
10.1109/SMICND.1996.557458
