• DocumentCode
    2125131
  • Title

    Optimization of N-type InSb photoconductive detectors

  • Author

    Grigorescu, C.E.A. ; Manea, S.A. ; Lazarescu, M.F. ; Logofatu, C. ; Necsoiu, T. ; Botila, T. ; Munteanu, I.

  • Author_Institution
    Inst. of Optoelectron., Bucharest, Romania
  • Volume
    2
  • fYear
    1996
  • fDate
    9-12 Oct 1996
  • Firstpage
    599
  • Abstract
    The aim of this paper is to study the influence of power dissipation on the performance of n-type InSb photoconductive detectors for 3-5 μm atmospheric window. By providing mainly a convective heat transfer among the elements of the device the power dissipation has been increased to 10 W/cm2. An improvement in the spectral detectivity is observed. No enhancement in the total noise is remarked
  • Keywords
    III-V semiconductors; convection; indium compounds; infrared detectors; photoconducting devices; semiconductor device noise; 3 to 5 micrometre; IR detectors; InSb; atmospheric window; convective heat transfer; photoconductive detectors; power dissipation; spectral detectivity; total noise; Charge carrier processes; Crystals; Delay; Detectors; Electrons; Heat transfer; Nitrogen; Photoconductivity; Power dissipation; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1996., International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-3223-7
  • Type

    conf

  • DOI
    10.1109/SMICND.1996.557458
  • Filename
    557458
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2125131