Title :
Self-aligned AlInAs native oxidized buried hetero-structure InGaAsP/InP distributed feedback laser with circular beam and high T0 potential
Author :
Wang, Zhi-jie ; Chua, Soo-jin ; Wang, Wei ; Zhou, Fan ; Zhang, Zi-ying ; Zhang, Jing-yuan ; Wang, Xiao-jie
Author_Institution :
Inst. of Mater. Res. & Eng., Singapore
Abstract :
InGaAsP/InP self-aligned native oxidized buried heterostructure distributed feedback (SA-NOBH-DFB) laser is proposed. It is easy to process as ridge waveguide DFB laser and has a superior performance. The current aperture can be easily controlled without selective regrowth. Preliminarily, the laser exhibited a low threshold of 5.0 mA with 36 dB side mode suppression ratio (SMSR) at 1.562 μm. It shows a single transverse mode with full width at half maximum angles of 33.6° and 42.6° for the lateral and vertical fields, respectively. Its beam is move circular than that of the as-grown BH laser because the refractive index of oxide is lower than as-grown layer and results in larger lateral optical confinement. Its characteristic temperature (T0 ) is 50 K in average but it even becomes higher in high temperature region
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; laser modes; oxidation; semiconductor lasers; waveguide lasers; 1.562 micron; 5.0 mA; AlInAs; InGaAsP-InP; InGaAsP/InP SA-NOBH-DFB laser; characteristic temperature; circular beam; ridge waveguide; self-aligned native oxidized buried heterostructure distributed feedback laser; side mode suppression ratio; single transverse mode operation; threshold current; Apertures; Distributed feedback devices; Indium phosphide; Laser beams; Laser feedback; Laser modes; Optical waveguides; Refractive index; Temperature; Waveguide lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location :
Williamsburg, VA
Print_ISBN :
0-7803-6320-5
DOI :
10.1109/ICIPRM.2000.850322