Title :
Highly uniform 1.55 μm wavelength lasers with deeply etched semiconductor/benzocyclobutene DBR
Author :
Raj, M. Madhan ; Wiedmann, J. ; Saka, Y. ; Ebihara, K. ; Matsui, K. ; Arai, S.
Author_Institution :
Res. Center for Quantum Effect Electron., Tokyo Inst. of Technol., Japan
Abstract :
1.55 μm wavelength GaInAsP lasers with high reflective deeply etched semiconductor/benzocyclobutene (BCB) DBR showing low threshold current and high differential quantum efficiency were successfully obtained with high uniformity. Threshold current as low as 7.2 mA and differential quantum efficiency as high as 50% from the front cleaved facet were obtained with 160 μm-long DBR lasers with 15-DBR reflectors on the rear side. The reflectivity was estimated to be as high as 95% from the measurement of the threshold current dependence on the cavity length. Finally, a preliminary aging test under a room temperature CW condition showed stable operation for duration in excess of 300 hours
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; etching; gallium arsenide; indium compounds; semiconductor lasers; 1.55 micron; 50 percent; 7.2 mA; GaInAsP; GaInAsP laser; aging; deep etching; differential quantum efficiency; reflectivity; room temperature CW operation; semiconductor/benzocyclobutene DBR; threshold current; Aging; Current measurement; Distributed Bragg reflectors; Etching; Length measurement; Reflectivity; Semiconductor lasers; Temperature; Testing; Threshold current;
Conference_Titel :
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location :
Williamsburg, VA
Print_ISBN :
0-7803-6320-5
DOI :
10.1109/ICIPRM.2000.850324
