Ultrafast intersubband absorption switching using InGaAs/AlAsSb quantum wells

Author

Wada, O. ; Yoshida, H. ; Neogi, A. ; Akiyama, T. ; Mozume, T. ; Geogiev, N. ; Asakawa, K.

Author_Institution

FESTA Labs., Femtosecond Technol. Res. Assoc., Tsukuba, Japan

fYear

2000

fDate

2000

Firstpage

431

Lastpage

434

Abstract

We report an experimental demonstration of absorption saturation effect as well as picosecond response of the intersubband transition in InGaAs/AlAsSb quantum wells grown on an InP substrate. This result indicates promising feature of intersubband transition in this material system for the application to all-optical switches in optical time-division multiplexing systems operating at a bit rate beyond 100 Gb/s

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high-speed optical techniques; indium compounds; optical saturable absorption; optical switches; semiconductor quantum wells; 100 Gbit/s; InGaAs-AlAsSb; InGaAs/AlAsSb quantum well; InP; InP substrate; absorption saturation; all-optical switch; intersubband transition; optical time division multiplexing system; picosecond response; ultrafast intersubband absorption switching; Absorption; Communication switching; Indium gallium arsenide; Indium phosphide; Nonlinear optics; Optical saturation; Optical switches; Substrates; Ultrafast optics; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on

Conference_Location

Williamsburg, VA

ISSN

1092-8669

Print_ISBN

0-7803-6320-5

Type

conf

DOI

10.1109/ICIPRM.2000.850325

Filename

850325