Highly gain-saturated GaInAsP/InP SOA modulator for incoherent spectrum-sliced light source

Author

Koyama, F. ; Yamatoya, T. ; Iga, K.

Author_Institution

Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan

fYear

2000

fDate

2000

Firstpage

439

Lastpage

442

Abstract

We proposed and demonstrated a highly gain-saturated semiconductor optical amplifier (SOA) modulator for spectrum-sliced multi-wavelength light sources. The saturation in gain enables us to reduce the spontaneous emission beat noise in spectrum-sliced incoherent light, which is a main problem in incoherent spectrum slicing. The intensity modulation of spectrum-sliced incoherent light using a GaInAsP/InP SOA modulator was carried out with a bit rate of 600 Mb/s. An error rate floor was removed with a help of highly saturated gain. Expected performances of this proposed SOA modulator including efficiency and noise reduction capabilities will also be discussed for use in high-capacity WDM local area networks

Keywords

Gallium arsenide; III-V semiconductors; Indium compounds; Intensity modulation; Light sources; Optical communication equipment; Optical modulation; Optical noise; Optical saturation; Semiconductor optical amplifiers; Spontaneous emission; 600 Mbit/s; GaInAsP-InP; GaInAsP/InP semiconductor optical amplifier modulator; WDM local area network; efficiency; gain saturation; incoherent multiwavelength light source; intensity modulation; intensity noise suppression; spectrum slicing; spontaneous emission beat noise; Bit rate; Indium phosphide; Intensity modulation; Light sources; Noise reduction; Optical modulation; Optical noise; Semiconductor device noise; Semiconductor optical amplifiers; Spontaneous emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on

Conference_Location

Williamsburg, VA

ISSN

1092-8669

Print_ISBN

0-7803-6320-5

Type

conf

DOI

10.1109/ICIPRM.2000.850327

Filename

850327