DocumentCode
2125313
Title
Temperature study of the carrier lifetime in solar cells with one dominant trap energy level
Author
Dobrescu, Dragos ; Rusu, Adrian
Author_Institution
Politehnic Univ. of Bucharest, Romania
Volume
2
fYear
1996
fDate
9-12 Oct 1996
Firstpage
619
Abstract
Based on experimental observation, a new mathematical model is made for explaining the carrier lifetime versus temperature dependence in silicon solar cells manufactured on p-type material with one dominant acceptor trap energy level, situated in the lower part of the forbidden band. This model explains the behaviour of the lifetime taking into account the SRH model for the lifetime and the physical parameters temperature dependencies
Keywords
carrier lifetime; electron traps; elemental semiconductors; semiconductor device models; silicon; solar cells; SRH model; Si; acceptor trap energy level; carrier lifetime; p-type silicon; solar cell; temperature dependence; Charge carrier lifetime; Charge carrier processes; Electron traps; Electronic switching systems; Energy states; Equations; Mathematical model; Photovoltaic cells; Silicon; Temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 1996., International
Conference_Location
Sinaia
Print_ISBN
0-7803-3223-7
Type
conf
DOI
10.1109/SMICND.1996.557465
Filename
557465
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