Long wavelength GaInAsP/InP laser with automatically formed tunneling aperture

Author

Sekiguchi, S. ; Miyamoto, T. ; Kimura, T. ; Koyama, F. ; Iga, K.

Author_Institution

Precision & Intelligence Lab., Tokyo Inst. of Technol., Yokohama, Japan

fYear

2000

fDate

2000

Firstpage

451

Lastpage

454

Abstract

We have proposed a new current confinement structure for long-wavelength vertical-cavity surface-emitting lasers (VCSELs), i.e., automatically formed tunneling aperture (AFTA). The AFTA can provide a simple current confinement because it can be formed just by electrode annealing. A long wavelength GaInAsP/InP stripe laser with AFTA is fabricated. The annealing condition to form AFTA structure is investigated and optimized. We carried out tunneling electron microscopy (TEM) of the AFTA structure before and after electrode annealing. The TEM image shows the process of destroying tunnel junction

Keywords

Annealing; Gallium arsenide; III-V semiconductors; Indium compounds; Semiconductor lasers; Surface emitting lasers; Transmission electron microscopy; Tunneling; GaInAsP-InP; GaInAsP/InP stripe laser; automatically formed tunneling aperture; current confinement; electrode annealing; long wavelength vertical cavity surface emitting laser; transmission electron microscopy; tunnel junction; Annealing; Apertures; Chemical lasers; Electrodes; Indium phosphide; Laser theory; Quantum well lasers; Surface emitting lasers; Tunneling; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on

Conference_Location

Williamsburg, VA

ISSN

1092-8669

Print_ISBN

0-7803-6320-5

Type

conf

DOI

10.1109/ICIPRM.2000.850330

Filename

850330