DocumentCode
2125365
Title
An accurate neural network model of FET for intermodulation and power analysis
Author
Rousset, J. ; Harkouss, Y. ; Collantes, J.M. ; Campovecchio, M.
Author_Institution
IRCOM CNRS, University of Limoges, 123 Avenue Albert Thomas, 87060 Limoges, FRANCE.
Volume
1
fYear
1996
fDate
6-13 Sept. 1996
Firstpage
16
Lastpage
19
Abstract
An accurate nonlinear FET model based on a Neural Network representation of the drain current source has been developed to predict intermodulation distortion as well as output power performance. This new neural network model has been implemented in a commercial harmonic balance simulator and its efficiency is evidenced by a comparison with an empirical model (Tajima). The accuracy of the proposed model is verified by active load-pull measurements on a Texas HFET at 10 GHz.
Keywords
FETs; Function approximation; Multi-layer neural network; Multilayer perceptrons; Neural networks; Neurons; Power amplifiers; Power generation; Power system modeling; Predictive models;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1996. 26th European
Conference_Location
Prague, Czech Republic
Type
conf
DOI
10.1109/EUMA.1996.337633
Filename
4138563
Link To Document