One-tier device de-embedding using on-wafer line-series-shunt calibration

In this paper, a one-tier on-wafer device de-embedding methodology up to millimeter wave regions is presented by using the line-series-shunt calibration technique. All the calibration and de-embedding processes are accomplished without the needs of impedance-standard-substrate (ISS), which defines the reference impedance in the conventional on-wafer measurements. Three on-chip standards, namely a section of transmission line (TL), a series resistor, and a shunt resistor, are utilized to perform the calibration where the characteristics of the standards need not to be known in advance and can be evaluated through the self-calibration procedure. The proposed method is examined by the GaAs 0.15 μm pseudomorphic high electron mobility transistor (pHEMT) device in the measured frequencies from 2 GHz to 90 GHz.