Title :
Tin dioxide sol-gel derived thin films deposited on porous silicon
Author :
Cobianu, C. ; Savaniu, C. ; Buiu, O. ; Dascalu, D. ; Zaharescu, Maria ; Parlog, C. ; van den Berg, A. ; Pecz, B.
Author_Institution :
Inst. of Microtechnol., Bucharest, Romania
Abstract :
SnO2 and SnO2:Sb sol-gel derived thin films have been prepared from tin (II) ethylhexanoate and tin (IV) ethoxide precursors (the later not reported before) in order to be used for gas sensing applications where porous silicon is used as a substrate. Transparent, crack-free and adherent layers were obtained on different types of substrates (Si, SiO2/Si). By energy dispersive X-ray spectroscopy (EDXS) performed on the cross section of the porosified silicon (PS) coupled with XTEM analysis, the penetration of the SnO2 sol-phase in the nanometric pores followed by the SnO 2 consolidation film in the pores of the PS, during subsequent annealing at 500°C has been experimentally proved
Keywords :
X-ray chemical analysis; annealing; antimony; semiconductor growth; semiconductor materials; semiconductor thin films; sol-gel processing; tin compounds; transmission electron microscopy; 500 C; Si; SnO2; SnO2-Si; SnO2:Sb; SnO2:Sb-Si; XTEM analysis; annealing; consolidation; energy dispersive X-ray spectroscopy; gas sensing applications; nanometric pores; porous Si substrate; sol-gel derived thin films; tin (II) ethylhexanoate precursor; tin (IV) ethoxide precursor; transparent crack-free adherent layers; Annealing; Dispersion; Performance analysis; Semiconductor films; Semiconductor thin films; Silicon; Spectroscopy; Sputtering; Substrates; Tin;
Conference_Titel :
Semiconductor Conference, 1996., International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3223-7
DOI :
10.1109/SMICND.1996.557469
