DocumentCode :
2125410
Title :
Extremely low crosstalk characteristic of semiconductor optical ADM device with deep grating
Author :
Horita, M. ; Yazaki, T. ; Tanaka, S. ; Matsushima, Y.
Author_Institution :
KDD Kamifukuoka R&D Labs., Saitama, Japan
fYear :
2000
fDate :
2000
Firstpage :
458
Lastpage :
461
Abstract :
Improvement of diffraction efficiency of a vertically and contra-directionally coupled semiconductor waveguide type optical add and drop multiplexer was investigated theoretically and experimentally. Numerical calculations clarified that it was necessary to introduce a deep grating in order to attain low crosstalk characteristics required for practical application. Devices with a grating having a depth of 200 nm were fabricated by a five-step metal organic vapor phase epitaxy (MOVPE) process accompanied by reactive ion etching (RIE) and wet etching. Such a deep grating was realized by an optimization of surface treatment prior to MOVPE regrowth and growth condition. An extremely low crosstalk of -36 dB was successfully achieved
Keywords :
diffraction gratings; multiplexing equipment; optical communication equipment; optical crosstalk; optical waveguide components; VECCS-OADM; crosstalk; diffraction grating; metal organic vapor phase epitaxy; optical add-and-drop multiplexer; reactive ion etching; surface treatment; vertically and contra-directionally coupled semiconductor waveguide; wet etching; Epitaxial growth; Epitaxial layers; Gratings; Optical coupling; Optical crosstalk; Optical diffraction; Optical waveguide theory; Optical waveguides; Ultraviolet sources; Wet etching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location :
Williamsburg, VA
ISSN :
1092-8669
Print_ISBN :
0-7803-6320-5
Type :
conf
DOI :
10.1109/ICIPRM.2000.850332
Filename :
850332
Link To Document :
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