• DocumentCode
    2125436
  • Title

    Experimental and theoretical investigation of PbTe growth by MBE on (111) BaF2 substrates

  • Author

    Andronik, K.I. ; Keloglu, O.Yu. ; Mazur, V.A. ; Zasavitski, E.A.

  • Author_Institution
    Inst. of Applied Phys., Chisinau, Moldova
  • Volume
    2
  • fYear
    1996
  • fDate
    9-12 Oct 1996
  • Firstpage
    637
  • Abstract
    Lead telluride films have been grown on cleaved BaF2 substrates by MBE method. Growth process was monitored by RHEED system and the crystal structure of the obtained films was investigated by θ-2θ and grazing angle X-ray tests. Optimal technological regimes are found and a phenomenological theoretical model of the MBE growth process is proposed
  • Keywords
    II-VI semiconductors; X-ray diffraction; crystal structure; lead compounds; materials preparation; molecular beam epitaxial growth; reflection high energy electron diffraction; semiconductor epitaxial layers; semiconductor growth; BaF2; BaF2(111) substrates; MBE growth; PbTe films; PbTe-BaF2; RHEED; crystal structure; grazing angle X-ray tests; optimal technological regimes; phenomenological theoretical model; Lead compounds; Molecular beam epitaxial growth; Monitoring; System testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1996., International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-3223-7
  • Type

    conf

  • DOI
    10.1109/SMICND.1996.557471
  • Filename
    557471
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2125436