• DocumentCode
    2125466
  • Title

    High fT, high current gain InP/InGaAs:C HBT grown by LP-MOVPE with non-gaseous sources

  • Author

    Kim, S.O. ; Velling, P. ; Auer, U. ; Agethen, M. ; Prost, W. ; Tegude, F.J.

  • Author_Institution
    Dept. of Solid State Electron., Gerhard-Mercator-Univ. Duisburg, Germany
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    470
  • Lastpage
    472
  • Abstract
    A compositionally graded base InP/InGaAs:C HBT is grown by LP-MOVPE with novel non-gaseous source configuration. The HBT devices with an emitter area of AE=20 μm2 were fabricated using a novel self-aligned two metalization step technology and an B-E-C contact configuration avoiding the emitter/base air-bridge. The HBTs exhibit simultaneously a current gain cut-off frequency of f T=149 GHz and very high dc current gain up to 400. These are record results regarding dc current gain at high transit frequency
  • Keywords
    III-V semiconductors; carbon; gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor growth; vapour phase epitaxial growth; 149 GHz; B-E-C contact configuration; InP-InGaAs:C; InP/InGaAs:C HBT; LP-MOVPE; current gain cut-off frequency; high current gain; nongaseous source configuration; two metalization step technology; Contact resistance; Cutoff frequency; Doping; Electrons; Epitaxial growth; Epitaxial layers; Heterojunction bipolar transistors; Indium phosphide; Solid state circuits; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
  • Conference_Location
    Williamsburg, VA
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-6320-5
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2000.850335
  • Filename
    850335
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2125466