DocumentCode :
2125486
Title :
Titanium stoichiometry in ion beam induced oxidation of TiSi2
Author :
Osiceanu, P.
Author_Institution :
Inst. of Phys. Chem., Bucharest, Romania
Volume :
2
fYear :
1996
fDate :
9-12 Oct 1996
Firstpage :
645
Abstract :
Titanium silicides films grown on Si(100) substrate were investigated by XPS depth profiling after athermal ion beam induced oxidation. The composition and stoichiometry of these films were quantitatively determined as chemical state relative concentrations vs. sputter time
Keywords :
VLSI; X-ray photoelectron spectra; integrated circuit metallisation; ion beam effects; metallic thin films; oxidation; stoichiometry; titanium compounds; Si(100) substrate; TiSi2; TiSi2 films; TiSi2-Si; VLSI technology; XPS depth profiling; chemical state relative concentration; composition; interconnects; ion beam induced oxidation; sputter time; stoichiometry; Argon; Chemicals; Ion beams; Nitrogen; Oxidation; Silicon; Sputtering; Titanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Conference, 1996., International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3223-7
Type :
conf
DOI :
10.1109/SMICND.1996.557474
Filename :
557474
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2125486
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