• DocumentCode
    2125486
  • Title

    Titanium stoichiometry in ion beam induced oxidation of TiSi2

  • Author

    Osiceanu, P.

  • Author_Institution
    Inst. of Phys. Chem., Bucharest, Romania
  • Volume
    2
  • fYear
    1996
  • fDate
    9-12 Oct 1996
  • Firstpage
    645
  • Abstract
    Titanium silicides films grown on Si(100) substrate were investigated by XPS depth profiling after athermal ion beam induced oxidation. The composition and stoichiometry of these films were quantitatively determined as chemical state relative concentrations vs. sputter time
  • Keywords
    VLSI; X-ray photoelectron spectra; integrated circuit metallisation; ion beam effects; metallic thin films; oxidation; stoichiometry; titanium compounds; Si(100) substrate; TiSi2; TiSi2 films; TiSi2-Si; VLSI technology; XPS depth profiling; chemical state relative concentration; composition; interconnects; ion beam induced oxidation; sputter time; stoichiometry; Argon; Chemicals; Ion beams; Nitrogen; Oxidation; Silicon; Sputtering; Titanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Conference, 1996., International
  • Conference_Location
    Sinaia
  • Print_ISBN
    0-7803-3223-7
  • Type

    conf

  • DOI
    10.1109/SMICND.1996.557474
  • Filename
    557474
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2125486