Title :
A laterally etched collector InP/InGaAs(P) DHBT process for high speed power applications
Author :
Schnyder, I. ; Rohner, M. ; Gini, E. ; Huber, D. ; Bergamaschi, C. ; Jäckel, H.
Author_Institution :
Electron. Lab., Swiss Fed. Inst. of Technol., Zurich, Switzerland
Abstract :
We present a selective laterally wet etched collector InP/InGaAs/InGaAsP double heterojunction bipolar transistor (DHBT) with a quaternary step graded base collector structure. This device shows a DC current gain of β=70 over a large collector current range, a breakdown voltage of BVCEO=10.5 V, and a maximal collector emitter voltage of more than 5.5 V at 105 A/cm2 collector current density. A transit frequency of fT=115 GHz and a maximum oscillation frequency of fmax=170 GHz were achieved
Keywords :
III-V semiconductors; etching; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; power bipolar transistors; 10.5 V; 115 GHz; 170 GHz; 5.5 V; DC current gain; InP-InGaAs-GaAsP; InP/InGaAs(P) DHBT process; InP/InGaAs/InGaAsP; breakdown voltage; double heterojunction bipolar transistor; high speed power applications; laterally etched collector; maximum oscillation frequency; quaternary step graded base collector structure; Double heterojunction bipolar transistors; Dry etching; Frequency; Gold; Indium gallium arsenide; Indium phosphide; Laboratories; Space technology; Tin; Wet etching;
Conference_Titel :
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location :
Williamsburg, VA
Print_ISBN :
0-7803-6320-5
DOI :
10.1109/ICIPRM.2000.850337
