Title :
Lateral design of InP/InGaAs DHBTs for 40 GBIT/s ICs
Author :
Blayac, S. ; Riet, M. ; Benchimol, J.L. ; Berdaguer, P. ; Kauffman, N. ; Godin, J. ; Scavennec, A.
Author_Institution :
Groupe d´´Interet Econ., France Telecom R&D, Marcoussis, France
Abstract :
InP-based HBTs are now available exhibiting cut-off frequency well over 100 GHz even at 1 mA. In this paper, a 40 Gbit/s IC-oriented InP/InGaAs DHBT technology is presented with maximum Ft of 170 GHz and Fmax over 210 GHz with BVce0>9 V, specific features of this technology have been developed to increase the design flexibility: high current gain and frequency performances are kept over a large range of collector currents (from 1 mA to 100 mA) and for various dimensions, this is achieved through size-specific lateral transistor design optimization, these features are required for high-performance 40 Gbit/s ICs designed for optical transmission systems, in which careful transistor optimization has to be performed according to its function in the circuit
Keywords :
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; power bipolar transistors; power integrated circuits; 1 to 100 mA; 170 GHz; 210 GHz; 9 V; InP-InGaAs; InP/InGaAs DHBTs; cut-off frequency; design flexibility; high current gain; size-specific lateral transistor design optimization; Circuits; Cutoff frequency; Design optimization; Double heterojunction bipolar transistors; Fabrication; Indium gallium arsenide; Indium phosphide; Performance gain; Research and development; Telecommunications;
Conference_Titel :
Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on
Conference_Location :
Williamsburg, VA
Print_ISBN :
0-7803-6320-5
DOI :
10.1109/ICIPRM.2000.850338
