DocumentCode
2125600
Title
The effect of extrinsic capacitances on the microwave performance of Ga0.51In0.49P/GaAs MISFETs (0 nm⩽t⩽10 nm) grown by GSMBE
Author
Lin, Yo-Sheng ; Lu, Shey-Shi
Author_Institution
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Volume
2
fYear
1996
fDate
9-12 Oct 1996
Firstpage
659
Abstract
The effect of extrinsic capacitances on the microwave performance of Ga0.51In0.49P/GaAs MISFETs was first studied experimentally and theoretically by varying the thickness of the Ga0.51In0.49P insulating layer. MISFETs with airbridge gate structure showed higher fts, and fmax s than those of MISFETs with traditional gate structure due to the lower extrinsic capacitances. Moreover, the maximum values of ft s, and fmaxs for a 1 μm gate length device all happen when t is between 50 nm and 100 nm. These results demonstrate that Ga0.51In0.49P/GaAs airbridge gate MISFETs with insulator thickness between 50 nm and 100 nm were very suitable for microwave high power device applications
Keywords
III-V semiconductors; MISFET; capacitance; chemical beam epitaxial growth; gallium arsenide; gallium compounds; microwave field effect transistors; microwave power transistors; power field effect transistors; GSMBE growth; Ga0.51In0.49P-GaAs; MISFET; airbridge gate; extrinsic capacitance; insulator thickness; microwave power device; Distortion; Frequency; Gallium arsenide; Insulation; Linearity; MESFETs; Metal-insulator structures; Microwave devices; Parasitic capacitance; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 1996., International
Conference_Location
Sinaia
Print_ISBN
0-7803-3223-7
Type
conf
DOI
10.1109/SMICND.1996.557478
Filename
557478
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