• DocumentCode
    2125620
  • Title

    Development of an all SiC high power density three-phase rectifier with interleaving

  • Author

    Zhang, Di ; Ning, Puqi ; Boroyevich, Dushan ; Wang, Fred ; Burgos, Rolando ; Karimi, Kamiar ; Immanuel, Vikram ; Solodovnik, Eugene

  • Author_Institution
    Center for Power Electron. Syst., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
  • fYear
    2011
  • fDate
    17-22 Sept. 2011
  • Firstpage
    4073
  • Lastpage
    4080
  • Abstract
    With interleaving, DPWM and SiC semiconductors, the design of a 15 kW high power density three-phase ac-dc rectifier is presented. The development of main passive components, main active components, and the system are reported in detail. With the presented technologies, the specific power density can be pushed to more than 2kW/lb.
  • Keywords
    AC-DC power convertors; PWM rectifiers; silicon compounds; SiC; ac-dc rectifier; high power density three-phase rectifier; main active components; main passive components; Capacitors; Inductors; Logic gates; Power conversion; Rectifiers; Silicon carbide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Energy Conversion Congress and Exposition (ECCE), 2011 IEEE
  • Conference_Location
    Phoenix, AZ
  • Print_ISBN
    978-1-4577-0542-7
  • Type

    conf

  • DOI
    10.1109/ECCE.2011.6064323
  • Filename
    6064323
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2125620