Manufacturing issues for large semi-insulating indium phosphide substrates

To realise the full potential of indium phosphide devices it is necessary to have a plentiful supply of high quality semi-insulating InP substrates. Although some InP device manufacturers use three inch wafers, volume production will require substrates which can be processed on existing GaAs fabrication lines. At the moment this means 100 mm diameter. To ensure the timely supply of these substrates, Title III programs were placed with American Xtal Technology and M/A-COM. This paper describes the development carried out at M/A-COM, which led to the production of 3 inch and 100 mm crystals with highly uniform electrical properties