Dopant distribution in selectively regrown InP:Fe and InGaP:Fe studied by time-resolved photoluminescence

Author

Gaarder, A. ; Barrios, C. Angulo ; Messmer, E. Rodriguez ; Lourdndoss, S. ; Marcinkevicius, S.

Author_Institution

Dept. of Phys.-Opt., R. Inst. of Technol., Stockholm, Sweden

fYear

2000

fDate

2000

Firstpage

518

Lastpage

521

Abstract

Time resolved photoluminescence with 1-2 μm spatial resolution has been applied for characterization of iron distribution in semi-insulating InP and InGaP epitaxial layers regrown by hydride vapor phase epitaxy around etched mesas. The mesas for the InP regrowth were etched along [110] and [-110]. For InGaP they contained GaAs/AlGaAs quantum well laser structures. In all cases, the Fe concentration was found to be close to the target values and showed little variation along the regrown layers

Keywords

III-V semiconductors; doping profiles; gallium compounds; indium compounds; iron; photoluminescence; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; time resolved spectra; vapour phase epitaxial growth; InGaP:Fe; InP:Fe; dopant distribution; hydride vapor phase epitaxy; selectively regrown; time-resolved photoluminescence; Epitaxial growth; Epitaxial layers; Etching; Indium phosphide; Iron; Photoluminescence; Quantum well lasers; Semiconductor lasers; Semiconductor materials; Spatial resolution;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2000. Conference Proceedings. 2000 International Conference on

Conference_Location

Williamsburg, VA

ISSN

1092-8669

Print_ISBN

0-7803-6320-5

Type

conf

DOI

10.1109/ICIPRM.2000.850349

Filename

850349